Dependence of stacking-fault nucleation on cluster mobility

Polop C, Lammerschop A, Busse C, Michely T

Research article (journal)

Abstract

A set of rate equations is presented that allows one to predict stacking-fault probabilities and island number densities in homoepitaxial growth. This set is shown to accurately reproduce the available experiments for homoepitaxial growth on Ir(111). Moreover, based on an analysis of the atomistic data describing stacking and diffusion on fcc(111) surfaces, three model cases are studied. They yield surprising insights into the importance of cluster mobility for stacking-fault island formation.

Details zur Publikation

Release year: 2005
Language in which the publication is written: English
Link to the full text: http://www.scopus.com/inward/record.url?eid=2-s2.0-20044370345&partnerID=40&md5=eab4bf19d953c9980e5229ae08b4eeb1