Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111)

Busse C, Baud S, Bihlmayer G, Polop C, Michely T, Blügel S

Research article (journal)

Abstract

Analysis of homoepitaxial growth on Ir(111) by scanning tunneling microscopy (STM) reveals that two different phases nucleate. We find islands in the regular face-centered cubic (fcc) stacking as well as in the hexagonal close-packed (hcp) stacking. Performing STM measurements on fcc and hcp areas shows an apparent, voltage dependent height difference of up to 6% of the regular layer distance. By applying first-principles calculations, the voltage dependent height difference can be attributed to the difference in the electronic structures of the two phases. The atoms in hcp stacking appear lower for a wide range of tunneling voltages, opposite to the actual relaxation.

Details zur Publikation

Release year: 2003
Language in which the publication is written: English
Link to the full text: http://www.scopus.com/inward/record.url?eid=2-s2.0-1342338933&partnerID=40&md5=7885230d4f33b9afc4a396d892b8d700