Semiconductor nanoplasmonics

Basic data for this project

Type of project: Participation in other joint projects
Duration: 01/09/2014 - 29/02/2016

Description

Combining nanoplasmonics with semiconductors brings together the best of two worlds: The ultimate control of the light field on the sub-wavelength scale and the possibility to design semiconductor structures on the nanometer scale. Nanoplasmonic structures do not only dramatically enhance and localise the light-field, but can also lead to new phenomena such as an excitation of dark modes. The subject of this project is the exploration of this new frontier by studying what happens when a semiconductor nanostructure is embedded as an optically active emitter in close proximity to a plasmonic nanostructure or when the gain material is completely made of semiconductor material. Moreover, plasmonically determined light field states will also allow the excitation of normally forbidden transitions in semiconductor materials, opening new avenues for the dynamical control of the optics of semiconductor nanostructures.

Keywords: Semiconductor; nanoplasmonics; nanostructure